ZXMN6A08G

www.DataSheet4U.com ZXMN6A08G 60V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS 60 RDS(on) (⍀) 0.080 @ VGS = 10V 0.150 @ VGS = 4.5V ID (A) 5.3 2.8 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features Low on-resistance Fast switching speed Low threshold Low gate drive SOT223 package D G S Applications DC-DC converters Power management functions Disconnect switches Motor control S D D G Tape width (mm) 12 12 Quantity per reel 1,000 4,000 Ordering information Device ZXMN6A08GTA ZXMN6A08GTC Reel size (inches) 7 13 Pinout - top view Device marking ZXMN 6A08 Issue 1 - May 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXMN6A08G Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ VGS = 10V; Tamb = 25°C(b) @ VGS = 10V; Tamb = 70°C(b) @ VGS = 10V; Tamb = 25°C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Power dissipation at Tamb = 25°C(a) Linear derating factor Power dissipation at Tamb = 25°C(b) Linear derating factor Operating and storage temperature range Tj, Tstg PD IDM IS ISM PD Symbol VDSS VGS ID Limit 60 ± 20 5.3 4.2 3.8 20 2.1 20 2 16 3.9 31 -55 to +150 A A A W mW/°C W mW/°C °C Unit V V A Thermal resistance Parameter Junction to ambient(a) Juncti...