ZXMC4A16DN8

www.DataSheet4U.com ZXMC4A16DN8 COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET SUMMARY N-Channel = V(BR)DSS= 40V : RDS(on)= 0.05 ; ID= 5.2A P-Channel = V(BR)DSS= -40V : RDS(on)= 0.06 ; ID= -4.7A DESCRIPTION This new generation of trench MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package APPLICATIONS Motor drive LCD backlighting ORDERING INFORMATION DEVICE REEL SIZE 7” 13” TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 2,500 PINOUT ZXMC4A16DN8TA ZXMC4A16DN8TC DEVICE MARKING ZXMC 4A16 TOP VIEW ISSUE 1 - NOVEMBER 2004 1 SEMICONDUCTORS ZXMC4A16DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (V GS = 10V; T A =25°C) (b)(d) (V GS = 10V; T A =70°C) (b)(d) (V GS = 10V; T A =25°C) (a)(d) Pulsed drain current (c) (b) SYMBOL V DSS V GS ID N-channel 40 Ϯ20 P-channe| -40 Ϯ20 UNIT V V 5.2 4.1 4.0 I DM IS I SM PD PD PD T j , T stg 24 2.5 24 1.25 10 1.8 14 2.1 17 -55 to +150 -4.7 -3.8 -3.6 -23 2.3 23 A A A A A A W mW/°C W mW/°C W mW/°C °C Continuous source current (body diode) Pulsed source current (body diode) (c) Power dissipation at T A =25°C (a) (d) Linear derating factor Power dissipation at T A =25°C (a) (e) Linear derating factor Power dissipat...