ZXMC3A17DN8

ZXMC3A17DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel : V(BR)DSS= 30V : RDS(on)= 0.050 ; ID= 5.4A P-Channel : V(BR)DSS= -30V : RDS(on)= 0.070 ; ID= -4.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive www.DataSheet4U.com Low profile SOIC package APPLICATIONS Motor drive LCD backlighting Q1 = N-channel Q2 = P-channel ORDERING INFORMATION DEVICE ZXMC3A17DN8TA ZXMC3A17DN8TC REEL SIZE 7” 13” TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units PINOUT DEVICE MARKING ZXMC 3A17 Top View ISSUE 1 - OCTOBER 2005 1 SEMICONDUCTORS ZXMC3A17DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (V GS = 10V; T A =25°C) (b)(d) (V GS = 10V; T A =70°C) (b)(d) (V GS = 10V; T A =25°C) (a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25°C Linear Derating Factor Power Dissipation at T A =25°C (a) (e) Linear Derating Factor Power Dissipation at T A =25°C (b) (d) Linear Derating Factor Operating and Storage Temperature Range PD PD T j , T stg (a) (d) (b) ADVANCE INFORMATION SYMBOL V DSS V GS ID N-channel 30 ±20 5.4 4.3 4.1 23 2.6...