20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXM66N02N8
SUMMARY (BR)DSS=20V; RDS(ON)=0.015
D=9A
DESCRIPTION
This new genera...
20V N-CHANNEL ENHANCEMENT MODE
MOSFET
ZXM66N02N8
SUMMARY (BR)DSS=20V; RDS(ON)=0.015
D=9A
DESCRIPTION
This new generation of high density
MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low
voltage, power management applications.
FEATURES Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE TAPE WIDTH (mm) QUANTITY
(inches)
PER REEL
ZXM66N02N8TA
13 12mm embossed 1000 units
DEVICE MARKING ZXM6
6N02
SO8
S S S
Top View
4 3 21 5 6 78
D D D
DRAFT ISSUE A - AUGUST 2000 ADVANCED INFORMATION
ZXM66N02N8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Drain-Source
Voltage
Gate- Source
Voltage
Continuous Drain Current (VGS=4.5V; TA=25°C)(b)(d) (VGS=4.5V; TA=70°C)(b)(d)
Pulsed Drain Current (c)(d)
Continuous Source Current (Body Diode)(b)(d)
Pulsed Source Current (Body Diode)(c)(d)
Power Dissipation at TA=25°C (a)(d) Linear Derating Factor
VDSS VGS ID
IDM IS ISM PD
Power Dissipation at TA=25°C (a)(e) Linear Derating Factor
PD
Power Dissipation at TA=25°C (b)(d) Linear Derating Factor
PD
Operating and Storage Temperature Range
Tj:Tstg
LIMIT
20
±12 9.0 8.0
35
3.1
35
-
-
2.5 20
-55 to +150
UNIT V V A
A A A W mW/°C W mW/°C W mW/°C °C
THERMAL RESISTANCE
PA...