PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 1 APRIL 94 FEATURES * 25 Volt VCEO * 2 Amp continuous current * Low s...
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 1 APRIL 94 FEATURES * 25 Volt VCEO * 2 Amp continuous current * Low saturation
voltage
ZTX749
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C derate above 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg
E-Line TO92 Compatible VALUE -35 -25 -5 -6 -2 1 5.7 -55 to +200 UNIT V V V A A W mW/ °C °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown
Voltage Collector-Emitter Breakdown
Voltage Emitter-Base Breakdown
Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. -35 -25 -5 -0.1 -10 -0.1 -0.12 -0.23 -0.9 -0.8 70 100 75 15 200 200 150 50 -0.3 -0.5 -1.25 -1 TYP. MAX. UNIT V V V
µA µA µA
CONDITIONS. IC=-100µ A, IE=0 IC=-10mA, IB=0* IE=-100µ A, IC=0 VCB=-30V VCB=-30V,T amb =100°C VEB=-4V, IE=0 IC=1A, IB=-100mA* IC=2A, IB=-200mA* IC=1A, IB=-100mA* IC=-1A, VCE=-2V* IC=-50mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V*
Emitter Cut-Off Current IEBO Collector-Emitter Saturation
Voltage Base-Emitter Saturation
Voltage Base-Emitter Turn-On
Voltage VCE(sat) VBE(sat) VBE(on)
V V V V
Static Forward Current hFE Transfer Ratio
300
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-254
ZTX749
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless ...