SEMICONDUCTOR
TECHNICAL DATA
CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. WAVE FORM CLIPPER
...
SEMICONDUCTOR
TECHNICAL DATA
CONSTANT
VOLTAGE REGULATION APPLICATION. REFERENCE
VOLTAGE APPLICATION. WAVE FORM CLIPPER
FEATURES Small Package : SOT-23 Sharp breakdown characteristic.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature
SYMBOL PD Tj Tstg Topr
RATING 200 150
-55 150 -55 150
UNIT mW
Z02W100V
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10 Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
C N K J
P7
Q 0.1 MAX
M
1. NC 2. ANODE 3. CATHODE
3 21
SOT-23
Marking
10AType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Zener
Voltage Dynamic Impedan
(Note1) (Note2)
VZ IZ=1mA ZZ IZ=1mA
Reverse Current
IR VR=76V
(Note 1) VZ is tested with pulsed (40ms) (Note 2) VZ is measured at IZ by given a very small A.C current signal.
MIN. 95. 0
-
TYP. -
MAX. 105. 0 700
0.2
UNIT V
A
2007. 2. 21
Revision No : 0
1/2
REVERSE SURGE POWER DISSIPATION PZSM (W)
Z02W100V
PZSM
PZSM - tw
1K Ta=25 C Repetitive
100 tr
10
1 1µ
10µ 100µ 1m 10m 100m
PULSE WIDTH TIME tW (S)
IZ - VZ
10m Ta=25 C TYP.
1m
100µ 10µ 1µ
100n
10n
1n 0
30 60
90
ZENER
VOLTAGE VZ (V)
120
TEMPERATURE COEFFICIENT OF ZENER DIODE γZ (% / C)
SS
POWER DISSIPATION P (mW)
P - Ta
250 * MOUNTED ON A GLASS EPOXY CIRCUIT BO...
