YHE51

PHENITEC SEMICONDUCTOR 1A 40V(0.82mm) YHE51 Schottky Barrier Diode Chip Information MAXIMUM RATINGS Parameter Symbol Chip Size 0.82 x 0.82mm Pad Size 0.68 x 0.68mm Chip Quantity 16276 pcs/wafer Scribe Line Width 60um Passivation PSG Wafer Size 5 inch Top Metallization Al(For Wire) Chip Thickness/Back Metal : See below "Ordering Information" Limit Unit Note Repetitive Peak Reverse Voltage VRRM 40 Non-Repetitive Peak Reverse Voltage VRSM Maximum DC Blocking Voltage VR Average Forward Rectified Current IF(AV) 1000 Peak Forward Surge Current IFSM Storage and Operating Temperature Range Tj,TSTG ELECTRICAL CHARACTERISTICS 10 -65 to +125 Parameter Symbol Spec Limit Probe Spec Maximum Forward Voltage VF1 0.320 0.310 VF2 0.450 VF3 0.750 VF4 VF5 Maximum DC Reverse Current IR1 1000 300 IR2 50 40 IR3 75 65 IR4 V V V mA A 8.3ms Single Half Sine-Wave degC Typical Unit Test Condition 0.250 0.405 0.665 55 20 25 V IF=100mA V IF=1A V IF=3A V V uA ...