Composite Transistors
XP6215
Silicon NPN epitaxial planer transistor
Unit: mm
0.425 1.25±0.1 0.425
0.2±0.05
For switch...
Composite Transistors
XP6215
Silicon NPN epitaxial planer transistor
Unit: mm
0.425 1.25±0.1 0.425
0.2±0.05
For switching/digital circuits
2.1±0.1
0.65
q
q
Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
2.0±0.1
s Features
0.65
1 2 3
6 5 4
0.2
0.9±0.1
s Basic Part Number of Element
q
0 to 0.1
UN1215 × 2 elements
1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2)
0.7±0.1
0.2±0.1
s Absolute Maximum Ratings
Parameter Rating Collector to base
voltage of Collector to emitter
voltage element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg
(Ta=25˚C)
Ratings 50 50 100 150 150 –55 to +150 Unit V V mA mW ˚C ˚C
4 : Collector (Tr2) 5 : Base (Tr1) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin)
Marking Symbol: 8X Internal Connection
1 2 3 Tr1 6 5 4
Tr2
s Electrical Characteristics
Parameter Collector to base
voltage Collector to emitter
voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation
voltage Output
voltage high level Output
voltage low level Transition frequency Input resistance
*1
(Ta=25˚C)
Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VOH VOL fT R1 Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC ...