XP151A12A2MR

N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.1Ω (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 23 Package Applications Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems General Description The XP151A12A2MR is a N-Channel Power MOS FET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. Features Low on-state resistance : Rds (on) = 0.1 Ω ( Vgs = 4.5V ) Rds (on) = 0.16 Ω ( Vgs = 2.5V ) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage : 2.5V High density mounting : SOT - 23 Pin Configuration Pin Assignment D 3 u PIN NUMBER 1 2 3 PIN NAME G S D FUNCTION Gate Source Drain 1 G 2 S SOT - 23 Top View Equivalent Circuit 3 Absolute Maximum Ratings Ta=25 OC PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS 20 + 12 1 4 1 0.5 150 -55 to 150 UNITS V V A A A W O 1 2 Power Dissipation (note) Channel Temperature Storage Temperature C C O N - Channel MOS FET ( 1 device built-in ) ( note ) : When implemented on a ceramic PCB Free Datasheet http://www.datasheet4u.com/ Electrical Characterist...