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XP151A11B0MR

Torex Semiconductor
Part Number XP151A11B0MR
Manufacturer Torex Semiconductor
Description POWER MOS FET
Published Apr 16, 2005
Detailed Description NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.17Ω (max) NUltra High-Speed Switching NGate Protec...
Datasheet PDF File XP151A11B0MR PDF File

XP151A11B0MR
XP151A11B0MR

Overview
NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.
17Ω (max) NUltra High-Speed Switching NGate Protect Diode Built-in NSOT-23 Package GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems The XP151A11B0MR is an N-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
Low on-state resistance : Rds (on) = 0.
12Ω ( Vgs = 10V ) : Rds (on) = 0.
17Ω ( Vgs = 4.
5V ) Ultra high-speed s...


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