This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
XN0A312 (XN1A312)
Silicon NPN epi...
This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
XN0A312 (XN1A312)
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For switching/digital circuits
/ ■ Features
e. Two elements incorporated into one package
e tag (Transistors with built-in resistor)
s Reduction of the mounting area and assembly cost by one half
0.4±0.2
1.50–+00..0255 2.8–+00..32
5˚
c cle ■ Basic Part Number n d cy UNR2212 (UN2212) + UNR2112 (UN2112)
(0.65)
1.1–+00..12 1.1–+00..13
a e t life ■ Absolute Maximum Ratings Ta = 25°C
uc Parameter
Symbol Rating
Unit
n u rod Tr1
Collector-base
voltage
VCBO
50
V
P (Emitter open)
te tin ur . Collector-emitter
voltage VCEO
50
0 to 0.1
V
fo n (Base open)
g pe tio Collector current
IC
100
mA
win e ty d rma Tr2
Collector-base
voltage
VCBO
−50
V
in n llo nc pe pe fo (Emitter open)
fo na ty ty in Collector-emitter
voltage VCEO
−50
V
t (Base open)
MMaianDtenancie/sDiscocntinuoePdlpeinlaacsnleuepddvlemaismsnaiteainfdiontedltdleonihisswatctcnpioonc:nng/e/ttpiiUnnauRuneeaLddsaotybnpoiceu.tnleatt/essc/en Overall
Collector current Total power dissipation Junction temperature Storage temperature
IC
−100
mA
PT
300
mW
Tj
150
°C
Tstg −55 to +150 °C
2.90+–00..0250
1.9±0.1 (0.95) (0.95)
3
4
5
2
1
0.30+–00..0150
10˚
Unit: mm
0.16+–00..0160
1: Collector (Tr1) Base (Tr2)
2: Collector (Tr2) EIAJ: SC-74A
3: Emitter (Tr2) 4: Base (Tr1) 5: Emitter (Tr1)
Mini5-G1 ...
