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Composite Transistors
XN0B301 (XN1B301)
Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitax...
www.DataSheet4U.com
Composite Transistors
XN0B301 (XN1B301)
Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2)
Unit: mm
For general amplification ■ Features
Two elements incorporated into one package Reduction of the mounting area and assembly cost by one half
2 3
2.90+0.20 –0.05 1.9±0.1 0.95 0.95 4 5
0.16+0.10 –0.06
1.50+0.25 –0.05
2.8+0.2 –0.3
1
■ Basic Part Number
2SB0709A (2SB709A) + 2SD0601A (2SD601A)
10˚
1.1+0.2 –0.1
0.65±0.15
0.30+0.10 –0.05
Parameter Tr1 Collector-base
voltage (Emitter open) Collector-emitter
voltage (Base open) Emitter-base
voltage (Collector open) Collector current Peak collector current Tr2 Collector-base
voltage (Emitter open) Collector-emitter
voltage (Base open) Emitter-base
voltage (Collector open) Collector current Peak collector current Overall Total power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg
Rating −60 −50 −7 −100 −200 60 50 7 100 200 300 150 −55 to +150
Unit V V V mA mA V
Tr2
1: Collector (Tr1) 2: Collector (Tr2) 3: Emitter (Tr2) EIAJ: SC-74A
Marking Symbol: 4Q Internal Connection
3 4 5
0 to 0.1
■ Absolute Maximum Ratings Ta = 25°C
4: Base (Tr2) Emitter (Tr1) 5: Base (Tr1) Mini5-G1 Package
1.1+0.3 –0.1
Tr1
V V mA mA mW °C °C
2 1
Note) The part number in the parenthesis shows conventional part number.
Publication date: December 2003 SJJ00117CED
0.4±0.2
5˚
1
XN0B301
■ Electrical Characteristics Ta = 25°...