Composite Transistors
XN04502 (XN4502)
Silicon NPN epitaxial planar type
For general amplification
■ Features • Two elem...
Composite Transistors
XN04502 (XN4502)
Silicon NPN epitaxial planar type
For general amplification
■ Features Two elements incorporated into one package Reduction of the mounting area and assembly cost by one half
■ Basic Part Number 2SD0602A (2SD602A) × 2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base
voltage (Emitter open) Collector-emitter
voltage (Base open) Emitter-base
voltage (Collector open)
VCBO VCEO VEBO
60 50 5
Collector current
IC 0.5
Peak collector current
ICP 1
Total power dissipation
PT 300
Junction temperature
Tj 150
Storage temperature
Tstg −55 to +150
Unit V V V A A mW °C °C
0 toc0.1
type)
1.1–+00..12e/
1.1–+00..13
2.90+–00..0250 1.9±0.1
(0.95) (0.95)
456
32
0.30+–00..0150 0.50+–00..0150 10˚
1
0.65±0.15
1.50–+00..0255 2.8–+00..32
5˚
Unit: mm
0.16+–00..0160
0.4±0.2
1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) EIAJ : SC-74
4: Collector (Tr2) 5: Base (Tr1) 6: Emitt...
