X28C512, X28C513
5V, Byte Alterable EEPROM
The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprieta...
X28C512, X28C513
5V, Byte Alterable EEPROM
The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate
CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The X28C512, X28C513 feature the JEDEC approved pin out for byte wide memories, compatible with industry standard EPROMS.
The X28C512, X28C513 support a 128-byte page write operation, effectively providing a 39µs/byte write cycle and enabling the entire memory to be written in less than 2.5 seconds. The X28C512, X28C513 also feature DATA Polling and Toggle Bit Polling, system software support schemes used to indicate the early completion of a write cycle. In addition, the X28C512, X28C513 support the software data protection option.
DATASHEET
FN8106 Rev 2.00 June 7, 2006
Features
Access Time: 90ns
Simple Byte and Page Write - Single 5V supply No external high
voltages or VPP control circuits - Self-timed No erase before write No complex programming algorithms No overerase problem
Low Power
CMOS - Active: 50mA - Standby: 500µA
Software Data Protection - Protects data against system level inadvertent writes
High Speed Page Write Capability Highly Reliable Direct Write™ Cell
- Endurance: 100,000 write cycles - Data retention: 100 years - Early end of write detection - DATA polling - Toggle bit polling
Two PLCC and LCC Pinouts - X28C512 X28C010 EPROM pin compatible - X28C513 Compatible with...