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X00619

0.8 A sensitive gate SCR

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X00619
0.8 A sensitive gate SCR
Features
■ ■ ■

IT(RMS) = 0.8 A VDRM / VRRM = 600 V IGT = 30 to 200 µA
G

A

K

Applications
■ ■ ■ ■ ■ ■

Limited gate current topologies Ground fault circuit interrupters Overvoltage crowbar protection in power supplies Protection in electronic ballasts Capacitive discharge ignitions Ignitors (lighting, oven...) Table 1. Device summary
IT(RMS) VDRM / VRRM IGT 0.8 A 600 V 30 to 200 µA
K G A

TO-92 (X00619-MA)

Description
The X006 SCR can be used as on/off function in applications where topology does not offer high current for gate triggering. This device is optimized in forward voltage drop and inrush current capabilities for reduced power losses and high reliability in harsh environments.

May 2009

Doc ID 15755 Rev 1

1/7
www.st.com 7

 Characteristics

X00619

1
Table 2.
Symbol IT(RMS) IT(AV) ITSM I²t di/dt IGM PG(AV) Tstg Tj

Characteristics
Absolute ratings (limiting values, TJ = 25 °C unless otherwise specified)
Parameter On-state rms current (180 °Conduction angle) Average on-state current (180 °Conduction angle) Non repetitive surge peak on-state current I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range tp = 8.3 ms tp = 10 ms tp = 10 ms F = 60 Hz tp = 20 µs TL = 85 °C TL = 85 °C Tj = 25 °C Tj = 25 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Value 0.8 0.5 10 A 9 0.4 50 1 0.1 - 40 to + 150 - 40 to + 125 A2s A/µs A W °C Unit A A

Table 3.
Symbol IGT VGT VGD VRG IH IL dV/dt

Electrical characteristics (TJ = 25 °C unless otherwise specified)
Test conditions MIN. VD = 12 V, RL = 140 Ω VD = VDRM, RL = 3.3 kΩ , RGK = 1 kΩ IRG = 10 µA IT = 50 mA, RGK = 1 kΩ IG = 1 mA, RGK = 1 kΩ VD = 67% VDRM, RGK = 1 kΩ Tj = 125 °C MAX. 0.8 Tj = 125 °C MIN. MIN. MAX. MAX. MIN. 0.2 5 5 6 40 V V V mA mA V/µs Value 30 µA 200 Unit

Table 4.
Symbol VTM VTO Rd IDRM IRRM

Static electrical characteristics (per diode)
Test conditions ITM = 1 A, tp = 380 µs Threshold voltage Dynamic resistance VDRM = VRRM, RGK = 1 kΩ Tj = 125 °C Tj = 25 °C Tj = 125 °C MAX Tj = 25 °C Value 1.35 0.85 245 1 100 Unit V V mΩ µA
µA

2/7

Doc ID 15755 Rev 1

 X00619
Table 5.
Symbol Rth(j-a) Rth(j-l) Junction to ambient (DC) Junction to lead (DC)

Characteristics

Thermal resistances
Parameter Value 150 °


























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