WTC2309

WTC2309 P-Channel Enhancement Mode Power MOSFET 1 GATE SOURCE 3 DRAIN DRAIN CURRENT -3.7 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 2 www.DataSheet4U.com Features: 3 1 2 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <75m Ω@V GS =-10V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 ,(TA=25˚C) ,(TA=70˚C) Pulsed Drain Current 1,2 Unless Otherwise Specified) Symbol VDS VGS ID I DM PD R θJA TJ , Tstg Value -30 ±20 -3.7 -3.0 -12 1.38 90 -55~+150 Unit V A Total Power Dissipation(TA=25˚C) Maximum Thermal Resistance Junction-ambient 3 Operating Junction and Storage Temperature Range W ˚C/W ˚C Device Marking WTC2309=2309 http:www.weitron.com.tw WEITRON 1/6 23-May-05 WTC2309 Electrical Characteristics (TA = 25℃ Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS =0,I D =-250μA www.DataSheet4U.com Gate-Source Threshold Voltage VDS =VGS ,I D =-250 μA Gate-Source Leakage Current VGS = ±20V Drain- Sou rce Leakage Current(Tj=25˚C) VDS =-30V,V GS =0 Drain- Sou rce Leakage Current(Tj=55˚C) VDS =-24V,V GS =0 Drain-Source On-Resistance 2 VGS =-10V,I D=-3.0A VGS =-4.5V,I D=-2.6A Forward Transconductance VDS =-10V, ID =-3A g fs R DS(o n) 5.0 75 120 mΩ I DSS -25 V(BR)DSS VGS(Th) I GSS -30 -1.0 V -3.0 ±100 -1 μA nA S Dynamic Input Capacitance VGS =0V,VDS =-25V,f=1.0MHz Output Capacitance VGS =0V,VD...