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WPT2N41

Will Semiconductor

PNP Power Transistor

WPT2N41 WPT2N41 Single, PNP, -30V, -3A, Power Transistor Http//:www.willsemi.com Descriptions The WPT2N41 is PNP bipola...


Will Semiconductor

WPT2N41

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Description
WPT2N41 WPT2N41 Single, PNP, -30V, -3A, Power Transistor Http//:www.willsemi.com Descriptions The WPT2N41 is PNP bipolar power transistor with very low saturation voltage. This device is suitable for use in charging circuit and other power management. Pb-free. Standard Product WPT2N41 is PDFN3x2-8L Features     Ultra low collector-to-emitter saturation voltage High DC current gain >100 3A continue collector current Small package PDFN3x2-8L. 8 7 6 5 Pin configuration (Top view) 1 2N41 2 = Device code = Year = Week Applications    Charging circuit Power regulator Other power management in portable equipments Device WPT2N41-8/TR YY WW Marking Order information Package PDFN3x2-8L Shipping 3000/Reel&Tape Will Semiconductor Ltd. 1 3 Jul, 2012 - Rev.1.0 4 WPT2N41 Absolute maximum ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Continues collector current Continues collector current Pulse collector current Power dissipation Power dissipation a b c a b Symbol VCEO VCBO VEBO IC ICM PD TJ TL Tstg Value -32 -45 -6 -3 -2 -6 3.0 1.2 Unit V V V A A A W W °C °C °C Junction Temperature Lead Temperature Storage Temperature Range a b c 150 260 -55~155 Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper Surface mounted on FR-4 board using minimum pad size, 1oz copper Pulse width=300µs, Duty Cycle<2% Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Collector-emitter breakdown voltage C...




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