WPMD2076
Dual P-Channel, -20V, -3A, Power MOSFET
VDS (V) -20
Typical Rds(on) (mΩ) 58@ VGS=-10V 71@ VGS=-4.5V 100@ VGS...
WPMD2076
Dual P-Channel, -20V, -3A, Power
MOSFET
VDS (V) -20
Typical Rds(on) (mΩ) 58@ VGS=-10V 71@ VGS=-4.5V 100@ VGS=-2.5V
WPMD2076
Http://www.sh-willsemi.com
Descriptions
The WPMD2076 is the Dual P-Channel logic mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low
voltage application, notebook computer power management and other battery powered circuits where high-side switching. .
Features
Pin configuration (Top view)
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold
Voltage SOP-8L package design
Applications
Power Management DC-DC converter circuit Simple drive requirement Load Switch Charging
2076 PD Y W
= Device Code = Special Code =Year =Week
Marking
Order information
Device WPMD2076-8/TR...