DatasheetsPDF.com

WNMD2182 Datasheet

Part Number WNMD2182
Manufacturers WillSEMI
Logo WillSEMI
Description MOSFET
Datasheet WNMD2182 DatasheetWNMD2182 Datasheet (PDF)

WNMD2182 WNMD2182 Dual N-Channel, 20V, 9.5A, Power MOSFET Http//:www.sh-willsemi.com VDS (V) Rds(on) (mΩ) 12@ VGS=4.5V 20 14@ VGS=3.1V 17@ VGS=2.5V ESD HBM 2000V PDFN2.9×2.8-8L Descriptions The WNMD2182 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2182 is Pb-free and Hal.

  WNMD2182   WNMD2182






Part Number WNMD2180
Manufacturers WillSEMI
Logo WillSEMI
Description MOSFET
Datasheet WNMD2182 DatasheetWNMD2180 Datasheet (PDF)

WNMD2180 Dual N-Channel, 20V, 11A, Power MOSFET VDS (V) 20 Typical Rds(on) (mΩ) 8.5@ VGS=4.5V 8.9@ VGS=3.8V 9.6@ VGS=3.1V 11@ VGS=2.5V ESD Protected Descriptions The WNMD2180 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2180 is Pb-free and Halogen-free. Features  Trench Techn.

  WNMD2182   WNMD2182







MOSFET

WNMD2182 WNMD2182 Dual N-Channel, 20V, 9.5A, Power MOSFET Http//:www.sh-willsemi.com VDS (V) Rds(on) (mΩ) 12@ VGS=4.5V 20 14@ VGS=3.1V 17@ VGS=2.5V ESD HBM 2000V PDFN2.9×2.8-8L Descriptions The WNMD2182 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2182 is Pb-free and Halogen-free. D2 D2 D1 D1 8 7 65 1 23 4 S2 G2 S1 G1 Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package PDFN2.9×2.8-8L  ESD Protected Class-2 (HBM 2000V) Applications  Driver for Relay, Solenoid, Motor, LED etc.  DC-DC converter circuit  Power Switch  Load Switch  Charging Pin configuration (Top view) 8 765 2182 NDYW 1 23 4 2182 ND YW = Device Co.


2017-05-01 : JVR-10N270K    JVR-10N220K    JVR-10N180K    WNMD2176    WNMD2178    WNMD2090    WNMD2078    WNM3025    WNM6002    WNM3019   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)