WNMD2180
Dual N-Channel, 20V, 11A, Power MOSFET
VDS (V) 20
Typical Rds(on) (mΩ)
8.5@ VGS=4.5V 8.9@ VGS=3.8V 9.6@ VGS=...
WNMD2180
Dual N-Channel, 20V, 11A, Power
MOSFET
VDS (V) 20
Typical Rds(on) (mΩ)
8.5@ VGS=4.5V 8.9@ VGS=3.8V 9.6@ VGS=3.1V 11@ VGS=2.5V ESD Protected
Descriptions
The WNMD2180 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2180 is Pb-free and Halogen-free.
Features
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold
Voltage Small package PDFN3×3-8L
Applications
Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit Power Switch Load Switch Charging
WNMD2180
Http://www.sh-willsemi.com
PDFN3×3-8L
Pin configuration (Top view)
87 65
2180 NDYW
1 234
2180 ND Y W
= Device Code = Special Code = Year = Week
Marking
Order information
Device
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