WNM3018
Small Signal N-Channel, 30V, 0.2A, MOSFET
VDS (V) Typical Rds(on) (Ω) 1.2@ VGS=10V
30 1.4@ VGS=4.5V 1.9@ VGS=2.5V
ESD Rating: 2000V HBM
Descriptions
The WNM3018 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in small s...
