Product specification
WNM3003
N-Channel, 30V, 4.0A, Power MOSFET
V(BR)DSS
Rds(on) () 0.033@ 10V 0.033@ 10V 0.043 @ 4.5V
SOT-23
30V
Descriptions
The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS
(ON)
D 3
with low gate 1 G 2 S
charge. This device is suitable for use in...
