WNM2034

Product specification WNM2034 N-Channel, 20V, 3.6A, Power MOSFET VDS (V) 20 Rdson (ȍ) 0.037 @ 10V 0.045 @ 4.5V Descriptions The WNM2034 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) SOT-23 D 3 with low gate charge. This device is suitable for use in DC-DC conversion and power switch applications. Standard Product WNM2034 is Pb-free. 1 G 2 S Features z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 Configuration (Top View) W34* W34 * = Device Code = Month (A~Z) Marking Applications z z z z Driver for Relay, Solenoid, Motor, LED etc. Order Information DC-DC converter circuit Power Switch Load Switch Device WNM2034-3/TR Package SOT-23 Shipping 3000/Tape&Reel http://www.twtysemi.com [email protected] 1 of 3 Product specification WNM2034 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Maximum Power Dissipation a Continuous Drain Current (TJ = 150 °C)b b Symbol VDS VGS TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C ID 10 S Steady State 20 ±12 Unit V 3.6 2.8 0.8 0.5 3.2 2.6 0.6 0.4 10 -55 to 150 3.3 2.6 0.7 0.4 3 2.4 0.5 0.3 A PD W ID A Maximum Power Dissipation Pulsed Drain Current c PD IDM TJ, Tstg W A °C Operating Junction and Storage Tempe...