WNM07N65/WNM07N65F 650V N-Channel MOSFET
Description
The WNM07N65/WNM07N65F is N-Channel enhancement MOS Field Effect Tr...
WNM07N65/WNM07N65F 650V N-Channel
MOSFET
Description
The WNM07N65/WNM07N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high
voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, power switching application and a wide variety of other applications.
WNM07N65/WNM07N65F
Features
650V@TJ=25°C Typ.RDS(on)=1.0 Ω Low gate charge 100% avalanche tested 100% Rg tested
D
GDS
TOT-O22- 0
FG S
GD S
TO-220F
WNM07N65
CC Y W
=Devices code = Special Code =Year =Week
WNM07N65F =Devices code CC = Special Code Y =Year
W =Week
Order Information
Device
Package
WNM07N65_3/T
TO-220
WNM07N65F_3/T
TO-220-F
Units/Tube 50 50
Absolution Maximum Ratings TA=25oC unless otherwise noted
Parameter
Symbol WNM07N65
WNM07N65F
Drain-Source
Voltage Gate-Source
Voltage
TC=25°C Continuous Drain Current
TC=100°C Pulsed Drain Current Single Pulsed Avalanche Energy ...