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WL005

EIC discrete Semiconductors

SILICON BRIDGE RECTIFIERS

WL005 - WL10 PRV : 50 - 1000 Volts Io : 1.0 Ampere SILICON BRIDGE RECTIFIERS WOB 0.39 (10.0) 0.31 (7.87) 0.22 (5.59) 0....


EIC discrete Semiconductors

WL005

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WL005 - WL10 PRV : 50 - 1000 Volts Io : 1.0 Ampere SILICON BRIDGE RECTIFIERS WOB 0.39 (10.0) 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) FEATURES : * * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board 1.10 (27.9) MIN. + AC 1.00 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) AC AC MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated leads solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 1.29 grams Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.22 (5.59) 0.18 (4.57) + 0.22 (5.59) 0.18 (4.57) Dimension in inches and (millimeter) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375" (9.5 mm) lead length Tc = 50°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Rating for fusing ( t < 8.3 ms. ) Maximum Forward Voltage per Diode at I F = 1.0 Amp. Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Junction Capacitance per Diode (Note 1) Typical Thermal Resistance (Note 2) ...




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