Wisdom Semiconductor
WFW24N60
N-Channel MOSFET
Features
■ RDS(on) (Typical 0.22 Ω )@VGS=10V ■ Gate Charge (Typical 90...
Wisdom Semiconductor
WFW24N60
N-Channel
MOSFET
Features
■ RDS(on) (Typical 0.22 Ω )@VGS=10V ■ Gate Charge (Typical 90nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C)
General Description
This Power
MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies.
Symbol 1. Gate{
TO-247
{ 2. Drain
●
◀▲
● ●
{ 3. Source
G DS
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGS EAS EAR dv/dt
PD
TSTG, TJ TL
Parameter Drain to Source
Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed
Gate to Source
Voltage
Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJC RθCS RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient
Min. -
(Note 1)
(Note 2) (Note 1) (Note 3)
Value 600 24.0
14.5 96.0
±30
1885 38.8 4.5 388 3.10 - 55 ~ 150
300
Value
Typ. -
0.24 -
Max. 0.32
40
Units V A A A V mJ mJ
V/ns W
W/°C °C °C
Units
°C/W °C...
