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WFW10N80 Datasheet

Part Number WFW10N80
Manufacturers Wisdom technologies
Logo Wisdom technologies
Description N-Channel MOSFET
Datasheet WFW10N80 DatasheetWFW10N80 Datasheet (PDF)

PROVISIONAL Wisdom Semiconductor WFW10N80 N-Channel MOSFET Features ■ ■ RDS(on) (Max 1.05 Ω )@VGS=10V Gate Charge (Typical 55nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain ● www.DataSheet4U.com ■ ■ ■ 1. Gate { ▲ ● ● { 3. Source General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-.

  WFW10N80   WFW10N80






N-Channel MOSFET

PROVISIONAL Wisdom Semiconductor WFW10N80 N-Channel MOSFET Features ■ ■ RDS(on) (Max 1.05 Ω )@VGS=10V Gate Charge (Typical 55nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain ● www.DataSheet4U.com ■ ■ ■ 1. Gate { ▲ ● ● { 3. Source General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. TO-247 G DS Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 800 10 6.3 40 Units V A A A V mJ mJ V/ns W W/°C °C °C ±30 960 26 4.0 260 2.08 - 55 ~ 150 300 Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient Value Min. - Typ. 0.24 -.


2008-06-25 : 78R08    IR313    PI6CU877    K4M561633G    1F0626-10    1F0626-20    IEC-TO-220V-18    IEC60127-2    EE-SX1042    EC4AW   


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