WFP840

WFP840 Silicon N-Channel MOSFET Features ■ 8A,500V,RDS(on)(Max 0.8Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 59nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a Electronic lamp ballast. Absolute Maximum Ratings Symbol Parameter VDSS Drain Source Voltage Continuous Drain Current(@Tc=25℃) ID Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ, Tstg Junction and Storage Temperature TL Channel Temperature *Drain current limited by junction temperature (Note1) (Note 2) (Note 1) (Note 3) Value 500 8 5.1 32 ±30 320 13.4 3.5 134 1.0 -55~150 300 Thermal Characteristics Symbol Parameter RQJC RQCS RQJA Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Min - Value Typ 0.5 - Max 0.93 62 Units V A A A V mJ mJ V/ns W W/℃ ℃ ℃ Units ℃/W ℃/W ℃/W Rev.A Nov.2010 C...