Features
� 10A,400V,RDS(on)(Max 0.55Ω)@VGS=10V � Ultra-low Gate Charge(Typical 60nC) � Fast Switching Capability � 100%A...
Features
� 10A,400V,RDS(on)(Max 0.55Ω)@VGS=10V � Ultra-low Gate Charge(Typical 60nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
WFP740
Silicon N-Channel
MOSFET
General Description
This Power
MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
Drain Source
Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source
Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)...