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■ RDS(on)(Max 22mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 31nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) WFP50N06 Silicon N-Channel MOSFET General Description This Power MOSFET is produced usin...

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