WFB33N25

PROVISIONAL Wisdom Semiconductor WFB33N25 N-Channel MOSFET Features ■ RDS(on) (Max 0.094 Ω )@VGS=10V ■ Gate Charge (Typical 37nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control. Symbol 1. Gate{ { 2. Drain ● ◀▲ ● ● { 3. Source Absolute Maximum Ratings (* Drain current limited by junction temperature) Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 1) (Note 2) (Note 1) (Note 3) Value 250 33* 20.4* 132* ±30 918 23.5 4.5 235 1.89 - 55 ~ 150 300 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ...