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WEDPNF8M721V-1012BI

ETC

8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package

White Electronic Designs WEDPNF8M721V-XBX 8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package ADVANCED*...


ETC

WEDPNF8M721V-1012BI

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Description
White Electronic Designs WEDPNF8M721V-XBX 8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package ADVANCED* FEATURES n n n Package: 275 Plastic Ball Grid Array (PBGA), 32mm x 25mm Commercial, Industrial and Military Temperature Ranges Weight: WEDPNF8M721V-XBX - 2.5 grams typical n n n n Sector Architecture One 16KByte, two 8KBytes, one 32KByte, and fif teen 64KBytes in byte mode One 8K word, two 4K words, one 16K word, and fifteen 32K word sectors in word mode. Any combination of sectors can be concurrently erased. Also supports full chip erase Boot Code Sector Architecture (Bottom) Embedded Erase and Program Algorithms Erase Suspend/Resume Supports reading data from or programing data to a sector not being erased SDRAM PERFORMANCE FEATURES n n n n n n n n Organized as 8M x 72 High Frequency = 100, 125MHz Single 3.3V ±0.3V power supply Fully Synchronous; all signals registered on positive edge of system clock cycle Internal pipelined operation; column address can be changed every clock cycle Internal banks for hiding row access/precharge Programmable Burst length 1,2,4,8 or full page 4096 refresh cycles BENEFITS n n n n n n 42% SPACE SAVINGS Reduced part count Reduced I/O count 14% I/O Reduction Suitable for hi-reliability applications SDRAM Upgradeable to 16M x 72 density (contact factory for information) Flash upgradeable to 2M x 8 (or 1M x 16 or 512K x 32) density FLASH PERFORMANCE FEATURES n n n n User Configurable as 1Mx8 or 512Kx16 Access T...




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