W15NK90Z

w w a D . w S a t e e h U 4 t m o .c STW15NK90Z N-CHANNEL 900V - 0.40Ω - 15A TO-247 Zener-Protected SuperMESH™ MOSFET TYPE VDSS 900 V RDS(on) < 0.55 Ω ID 15 A Pw 350 W STW15NK90Z s s s s s s TYPICAL RDS(on) = 0.40 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-247 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES w April 2004 w w t a .D MARKING W15NK90Z S a e h INTERNAL SCHEMATIC DIAGRAM U 4 t e .c 1 2 m o 3 ORDERING INFORMATION SALES TYPE STW15NK90Z PACKAGE TO-247 PACKAGING TUBE w w w .D a S a t e e h U 4 t m o .c 1/9 STW15NK90Z ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recov...