STP10NK80Z, STP10NK80ZFP, STW10NK80Z
N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO...
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power
MOSFETs in TO-220, TO-220FP and TO-247 packages
Datasheet — production data
Features TAB
Type STP10NK80Z STP10NK80ZFP STW10NK80Z
VDSS 800V 800V 800V
RDS(on) ID <0.90Ω 9A <0.90Ω 9A <0.90Ω 9A
Pw 160 W 40 W 160 W
■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeability
3 2 1
TO-220
3 2 1
TO-220FP
TO-247
Applications
■ Switching application
Description
These devices are N-channel Zener-protected Power
MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Figure 1. Internal schematic diagram
D(2,TAB)
G(1)
S(3)
AM01476v1
Table 1. Device summary Part number STP10NK80Z
STP10NK80ZFP STW10NK80Z
Marking P10NK80Z P10NK80ZFP W10NK80Z
Package TO-220 TO-220FP TO-247
Packaging Tube Tube Tube
March 2012
This is information on a product in full production.
Doc ID 8911 Rev 7
1/17
www.st.com
17
Contents
Contents
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . ...