.040" NPN Phototransistors
Clear Epoxy TO-106 Ceramic Package
VTT9002, 9003
PACKAGE DIMENSIONS inch (mm)
CASE 8 TO-10...
.040" NPN Phototransistors
Clear Epoxy TO-106 Ceramic Package
VTT9002, 9003
PACKAGE DIMENSIONS inch (mm)
CASE 8 TO-106 (FLAT) CHIP TYPE: 40T
PRODUCT DESCRIPTION
A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package. The chip is protected with a layer of clear epoxy. The base connection is brought out allowing conventional transistor biasing. These devices are spectrally matched to any of PerkinElmer IREDs.
ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted)
Maximum Temperatures Storage Temperature: Operating Temperature: Continuous Power Dissipation: Derate above 30°C: Maximum Current: Lead Soldering Temperature: (1.6 mm from case, 5 sec. max.)
-20°C to 70°C -20°C to 70°C 100 mW 2.5 mW/°C 25 mA 260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92)
Light Current lC mA Min. VTT9002 VTT9003 2.0 5.0 Max. — — H fc (mW/cm2) VCE = 5.0 V 100 (5) 100 (5) Dark Current lCEO H=0 (nA) Max. 100 100 VCE (Volts) 10 10 Collector Breakdown VBR(CEO) lC = 100 µA H=0 Volts, Min. 30 30 Emitter Breakdown VBR(ECO) lE = 100 µA H=0 Volts, Min. 6.0 6.0 Saturation
Voltage VCE(SAT) lC = 1.0 mA H = 400 fc Volts, Max. 0.55 0.55 Rise/Fall Time tR/tF lC = 1.0 mA RL = 100 Ω µsec, Typ. 4.0 6.0 Typ. ±50° ±50° Angular Response θ1/2
Part Number
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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