VTT1116

.050" NPN Phototransistors TO-46 Lensed Package VTT1115, 16, 17 PACKAGE DIMENSIONS inch (mm) CASE 3 TO-46 HERMETIC (LENSED) CHIP TYPE: 50T PRODUCT DESCRIPTION A large area high sensitivity NPN silicon phototransistor in a lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments The base connection is brought out allowing conventional transistor biasing. These devices are spectrally matched to the VTE11xx series of IREDs. ABSOLUTE MAXIMUM RATINGS (@ 25°C unless otherwise noted) Maximum Temperatures Storage Temperature: Operating Temperature: Continuous Power Dissipation: Derate above 30°C: Maximum Current: Lead Soldering Temperature: (1.6 mm from case, 5 sec. max.) -40°C to 110°C -40°C to 110°C 250 mW 3.12 mW/°C 200 mA 260°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92) Light Current lC mA Min. VTT1115 VTT1116 VTT1117 1.0 2.0 4.0 Max. — — — H fc (mW/cm2) VCE = 5.0 V 20 (1) 20 (1) 20 (1) Dark Current lCEO H=0 (nA) Max. 100 100 100 VCE (Volts) 10 10 10 Collector Breakdown VBR(CEO) lC = 100 µA H=0 Volts, Min. 30 30 30 Emitter Breakdown VBR(ECO) lE = 100 µA H=0 Volts, Min. 6.0 4.0 4.0 Saturation Voltage VCE(SAT) lC = 1.0 mA H = 400 fc Volts, Max. 0.40 0.40 0.40 Rise/Fall Time tR/tF lC = 1.0 mA RL = 100 Ω µsec, Typ. 5.0 8.0 8.0 Typ. ±15° ±15° ±15° Angular Response θ1/2 Part Number Refer to General Product Notes, page 2. PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO...