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VTE1113

GaAs Infrared Emitting Diodes

Description

GaAs Infrared Emitting Diodes TO-46 Lensed Package — 940 nm VTE1113 PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" X .018" This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications. ABSOLUTE MAXIMUM RATINGS @ 25...

PerkinElmer Optoelectronics

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