VTB Process Photodiodes
VTB8440B, 8441B
PACKAGE DIMENSIONS inch (mm)
CASE 21F 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2...
VTB Process Photodiodes
VTB8440B, 8441B
PACKAGE DIMENSIONS inch (mm)
CASE 21F 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2)
PRODUCT DESCRIPTION
Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared rejection filter. These diodes have very high shunt resistance and have good blue response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: Operating Temperature: -20°C to 75°C -20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)
VTB8440B
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ λrange λp VBR θ1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit
Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Spectral Application Range Spectral Response - Peak Breakdown
Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 330 580 40 ±50 1.1 x 10-13 (Typ.) 2.2 x 10 12 (Typ.) 2 .07 -8.0 1.0 720 330 580 40 ±50 2.4 x 10 -14 (Typ.) 9.7 x 10 12 (Typ.) 4 Typ. 5 .02 420 -2.0 2000 1.4 -8.0 1.0 720 .08 Max. Min. 4 Typ. 5 .02 420 -2.0 100 .08 Max. µA %/°C mV mV/°C pA GΩ %/°C nF nm nm V Degrees W ⁄ Hz cm Hz / W
VTB8441B
UNITS
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.co...