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VT3060C-M3, VIT3060C-M3
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rect...
www.vishay.com
VT3060C-M3, VIT3060C-M3
Vishay General Semiconductor
Dual High
Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.38 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA
K
VT3060C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
VIT3060C
3 2 1
PIN 1
PIN 2
PIN 3
K
FEATURES Trench MOS Schottky technology Low forward
voltage drop, low power losses High efficiency operation Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106 AEC-Q101 qualified Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package
2 x 15 A 60 V 170 A 0.57 V
150 °C TO-220AB, TO-262AA
Diode variations
Common cathode
MECHANICAL DATA
Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse
voltage
Maximum average forward rectified curren...