VT3060C-E3, VFT3060C-E3, VBT3060C-E3, VIT3060C-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trenc...
VT3060C-E3, VFT3060C-E3, VBT3060C-E3, VIT3060C-E3
www.vishay.com
Vishay General Semiconductor
Dual High
Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.38 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
VT3060C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VFT3060C
123
PIN 1
PIN 2
PIN 3
TO-262AA K
FEATURES
Trench MOS Schottky technology Low forward
voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package) Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
2 1
VBT3060C
PIN 1
K
PIN 2
HEATSINK
VIT3060C
3 2 1
PIN 1
PIN 2
PIN 3
K
PRIMARY...