VT10202C-M3, VBT10202C-M3, VIT10202C-M3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barr...
VT10202C-M3, VBT10202C-M3, VIT10202C-M3
www.vishay.com
Vishay General Semiconductor
Dual High
Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.58 V at IF = 2.5 A
TMBS ®
TO-220AB
VT10202C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB K
TO-262AA K
FEATURES Trench MOS Schottky technology generation 2 Low forward
voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package) Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB and TO-262AA package) Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
2 1
VBT10202C
PIN 1
K
PIN 2
HEATSINK
3 2 1 VIT10202C
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
2x5A
VRRM
200 V
IFSM
100 A
VF at IF = 5 A (TA = 125 °C)
0.65 V
TJ max. Package
175 °C
TO-220AB, TO-263AB, TO-262AA
Diode variations
Common cathode
MECHANICAL DATA
Case: TO-220AB, TO-263AB, and TO-262AA
Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwis...