VP1008 SERIES
P-Channel Enhancement-Mode MOS Transistors
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PRODUCT SUMMARY
PART V(BR)...
VP1008 SERIES
P-Channel Enhancement-Mode MOS Transistors
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PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER (V)
(!l) (A)
PACKAGE
VP100BB -100
5 -0.79 TO-205AD
VP100BL -100
5 -0.2B TO-92
VP100BM -100
5 -0.31 TO-237
Performance Curves: VPDV10 (See Section 7)
TO-92
BOTTOM VIEW
TO-20SAD
BOTTOM VIEW
1 SOURCE 2 GATE
3 DRAIN & CASE
TO-237
BOTTOM VIEW
1 SOURCE 2 GATE 3 DRAIN
1 SOURCE 2 GATE
3 DRAIN & TAB
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)3
PARAMETERS/TEST CONDITIONS
SYMBOL VP10088 2 VP1008L VP1008M UNITS
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Current Pulsed Drain Current 1
TA= 25°C TA = 100°C
Power Dissipation
TA= 25°C TA = 100°C
Operating Junction and Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
Vos VGS 10
10M Po Tj. T 5 tg
h
-100 ±20 -0.79 -0.53 -3 6.25 2.5
-100 ±30 -0.28 -0.17 -3 0.8 0.32 -55 to 150 300
-100 ±30 -0.31 -0.20 -3
1 0.4
V A W °C
THER...
