VP06D

"§upertexinc. VP06D P-Channel Enhancement-Mode Vertical DMOSPower FETs Ordering Information BVoss / BVOGS -350V -400V ROS(ON) (max) 250 250 IO(ON) (min) -O.4A -O.4A TO·3f VP0635N2 VP0640N2 Orur Number / Package T0.92 TO·220 VP0635N3 VP0635N5 VP0640N3 VP0640N5 DICE VP0635ND VP0640ND Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate mar11.lfacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inhereflt in MOS devices. Characteristic of all MOS structures, these devices are...