P-Channel Enhancement-Mode Vertical DMOS FETs
"§upertexinc.
VP03D
P-Channel Enhancement-Mode Vertical DMOS Power FETs
Ordering Information
BVoss / BVOGS
-350V
-40...
Description
"§upertexinc.
VP03D
P-Channel Enhancement-Mode Vertical DMOS Power FETs
Ordering Information
BVoss / BVOGS
-350V
-400V
RDS(ON)
(max)
6Q
6Q
10(ON)
(min)
-1.5A
-1.SA
TO-3 VP0335N1 VP0340N1
Order Number / Package
T()"39
TO·220
VP0335N2
VP0335N5
VP0340N2
VP0340NS
DICE VP0335ND VP0340ND
Features
o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C1SS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are fre...
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