VN0606N

TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number TN0601L VN0606L VN0606M www.DataSheet4U.comVN66AFD 60 V(BR)DSS Min (V) rDS(on) Max (W) 1.8 @ VGS = 10 V 3 @ VGS = 10 V 3 @ VGS = 10 V 3 @ VGS = 10 V VGS(th) (V) 0.5 to 2 0.8 to 2 0.8 to 2 0.8 to 2.5 ID (A) 0.47 0.33 0.39 1.46 Features D D D D D Low On-Resistance: 1.2 W Low Threshold: <1.6 V Low Input Capacitance: 35 pF Fast Switching Speed: 9 ns Low Input and Output Leakage TO-226AA (TO-92) S 1 Benefits D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage TO-237 (Tab Drain) S 1 Applications D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays TO-220SD (Tab Drain) S 1 G 2 G 2 G 2 D 3 Top View TN0601L VN0606L D 3 Top View VN0606M D 3 Top View VN66AFD Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Maximum Junction-to-Ambient Maximum Junction-to-Case Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. b. Reference case for all temperature testing. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #...