VN01C

~ 'flI !iupertexinc. VN01C N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVOClS 160V 200V ROS{ON) (max) 100 100 IOION) (min) 0.4A O.4A TO-39 VN0116N2 VN0120N2 Order Number I Package TO-92 TQ-220 VN0116N3 VN0120N3 VN0116N5 VN0120N5 Dice VN0116ND VN0120ND Features D Freedom from secondary breakdown D Low power drive requirement D Ease of paralleling D Low CISS and fast switching speeds D Excellent thermal stability D Integral Source-Drain diode D High input impedance and high gain D Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are fr...