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Description
VG26(V)(S)18165C/VG26(V)(S)18165D 1,048,576 x 16 - Bit CMOS Dynamic RAM
The devic...
www.DataSheet4U.com
VIS
Description
VG26(V)(S)18165C/VG26(V)(S)18165D 1,048,576 x 16 - Bit
CMOS Dynamic RAM
The device
CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron
CMOS technology and designed to operate from a single 5V only or 3.3V only power supply. Low
voltage operation is more suitable to be used on battery backup, portable electronic application. Selfrefresh is supported and CBR cycles are being performed. lt is packaged in JEDEC standard 42-pin 400mil SOJ and 50(44)-pin 400mil TSOPII.
Features
Single 5V or 3.3V only power supply High speed tRAC access time: 50/60ns Extended-data-out (EDO) page mode access I/O level: TTL compatible (Vcc = 5V) LVTTL compatible (Vcc = 3.3V) 4 refresh modes: - RAS only refresh - CAS - before - RAS refresh - Hidden refresh - Self-refresh Refresh interval: - RAS only refresh, CAS - before - RAS refresh and hidden refresh: 1024 cycles in 16 ms - Self-refresh: 1024 cycles JEDEC standard pinout: 44-pin 400mil SOJ and 50(44)-pin 400mil TSOPII
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Document:1G5-0179 Rev.2 Page 1
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Pin Configuration 42-Pin 400mil SOJ VCC DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 NC
VG26(V)(S)18165C/VG26(V)(S)18165D 1,048,576 x 16 - Bit
CMOS Dynamic RAM
50(44)-Pin 400mil TSOPII
VCC DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 NC NC WE RAS NC NC A0 A1 A2 A3 VCC
1 2 3 4 5 6 7 8 9 10 11 12...