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Description
VG26(V)(S)17400D 4,194,304 x 4 - Bit CMOS Dynamic RAM
The device is CMOS Dynamic ...
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VIS
Description
VG26(V)(S)17400D 4,194,304 x 4 - Bit
CMOS Dynamic RAM
The device is
CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated with an advanced submicron
CMOS technology and designed to operate from a single 5V only or 3.3V only power supply. Low
voltage operation is more suitable to be used on battery backup, portable electronic application. A new refresh feature called “ self-refresh “ is supported and very slow CBR cycles are being performed. It is packaged in JEDEC standard 26/24 - pin plastic SOJ or TSOP (II).
Features Single 5V ( ± 10 %) or 3.3V ( ± 10 %) only power supply High speed tRAC access time : 50/60 ns Low power dissipation - Active mode : 5V version 605/550 mW (Max.) 3.3V version 396/360 mW (Max.) - Standby mode : 5V version 1.375 mW (Max.) 3.3V version 0.54 mW (Max.) Fast Page Mode access I/O level : TTL compatible (Vcc = 5V) LVTTL compatible (Vcc = 3.3V) 2048 refresh cycles in 32 ms (Std) or 128ms (S - version) 4 refresh mode : - RAS only refresh - CAS-before-RAS refresh - Hidden refresh - Self - refresh (S - version)
ee DataSh
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Pin configuration
26/24 - PIN 300mil Plastic SOP
VSS DQ4 DQ3 CAS OE A9
VG26(V)(S)17400D 4,194,304 x 4 - Bit
CMOS Dynamic RAM
Pin configuration
26/24 - PIN 300mil Plastic TSOP (II)
26 25 24 23 22 21
VCC DQ1 DQ2 WE RAS NC
1 2 3 4 5 6
VCC DQ1 DQ2 WE RAS ...