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Description
VG26(V)(S)17405FJ 4,194,304 x 4 - Bit CMOS Dynamic RAM
The device CMOS Dynamic RA...
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VIS
Description
VG26(V)(S)17405FJ 4,194,304 x 4 - Bit
CMOS Dynamic RAM
The device
CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron
CMOS technology and designed to operate from a single 5V only or 3.3V oniy power supply. Low
voltage operation is more suitable to be used on battery backup, portable electronic application. A new refresh feature called “self-refresh” is supported and very slow CBR cycles are being performed. lt is packaged in JEDEC standard 26/24-pin plastic SOJ.
Features Single 5V( ± 10 %) or 3.3V(+10%,-5%) only power supply High speed tRAC acess time: 50/60ns Low power dissipation - Active wode : 5V version 660/605 mW (Mas) 3.3V version 432/396 mW (Mas) - Standby mode: 5V version 1.375 mW (Mas) 3.3V version 0.54 mW (Mas) Extended - data - out(EDO) page mode access I/O level: TTL compatible (Vcc = 5V) LVTTL compatible (Vcc = 3.3V)
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2048 refresh cycle in 32 ms(Std.) or 128 ms(S-version) 4 refresh modesh: - RAS only refresh - CAS - before - RAS refresh - Hidden refresh - Self-refresh(S-version)
DataShe
e
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Document:1G5-0162 Rev.1 Page 1
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VIS
VG26(V)(S)17405FJ 4,194,304 x 4 - Bit
CMOS Dynamic RAM
Pin Configuration 26/24-PIN 300mil Plastic SOJ
VCC DQ1 DQ2 WE RAS NC A10 A0 A1 A2 A3 VCC
1 2 3 4 5 6 8 9 10 11 12 13
26 25 24 23 22 21 19 18 17 16 15 14
VSS DQ4 DQ3 CAS O...