VF04N60

VITELIC 4N60 / VF04N60 MOSFET / N-Channel Enhancement Mode VF04N60 Product Summary VDS = 600 V ID = 4A RDS(ON) = 2.5 Ω Features ∋ High current handling capability ∋ Rugged and reliable ∋ Surface Mount package TO-220FP Absolute Maximum Ratings (TA = 25°C unless specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain-Source Diode Forward Current a ID IS Limit 600 ±30 4 4 Unit V V A A Revision A P.1 of 3 This document is the property of VITELIC TECHNOLOGY (INTERNATIONAL) LIMITED, and not allowed to copy or transformed to other format if not under the authority approval. VITELIC 4N60 / VF04N60 MOSFET / N-Channel Enhancement Mode VF04N60 N-Channel Electrical Characteristics (TA = 25°C unless specified) Parameter Symbol Condition Min Typ Max Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage Drain-Source On-State Resistance Diode Forward Voltage BVDS IDS IGS Vth RDS(ON) VSD VGS = 0V, ID = 250µA VDS = 600V, VGS = 0V VGS = ±30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 2A VGS = 0V, ID = 4A 600 670 ±1 ±1 2.0 3.0 4.5 2.5 0.8 1.5 Unit V µA µA V Ω V Notes: a. Surface Mounted on FR4 Board, t ≤ 10sec. b. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle. c. Guaranteed by Design, not subject to production. d. All above specification values are based on Vitelic’s testing machines. Revision A P.2 of 3 This document is the property of VITELIC TECHNOLOGY (I...